AOD1N60 / AOU1N60

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

-50 to 175

0

3

6

9

12

15

02

46

8

Figure 7: Gate-Charge Characteristics

1

10

100

1000

0

1

10

100

Figure 8: Capacitance Characteristics

0

200

400

600

800

1000

0.0001

0.001

0.01

0.1

1

10

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-

to-Case (Note F)

0.01

0.1

1

10

0.00001

0.0001

0.001

0.01

0.1

1

10

100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Single Pulse

T

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.0

0.1

1.0

10.0

1

10

100

1000

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

10

µs

10ms

1ms

0.1s

DC

limited

100

µs

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com