Features

1 of 14

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

RF MEMS

SZP-5026Z

4.9GHz to 5.9GHz 2W InGaP AMPLIFIER

RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar

Transistor (HBT) power amplifier. It is designed with InGaP-on-GaAs device technol-

ogy and fabricated with MOCVD for an ideal combination of low cost and high reli-

ability. This product is specifically designed for use as a driver or final stage power

amp for 802.16 equipment in the 4.9GHz to 5.9GHz bands. It is pre-matched on

both ports to simplify external application circuit design. It features an input power

detector, on/off power control, ESD protection, excellent overall robustness, and a

hand reworkable and thermally enhanced surface-mount SOF-26 package.

Active Bias

RFIN

RFOUT

Power

Detector

Vbias

Power

Up/Down

Control

Vcc

SZP-5026

802.11a 54Mb/s Class AB Per-

formance

5.9GHz, 5V, 680mA

On-Chip Input Power Detector

Internally Prematched Input and

Output

Proprietary Low Thermal Resis-

tance Package

Power Up/Down Control<1

μs

Applications

802.16 WiMAX Driver or Output

Stage

5GHz 802.11 WLAN and ISM

Applications

EDS-105366 Rev C

Preliminary

RFMD Green, RoHS Compliant, Pb-Free

Package: Proprietary SOF-26

SZP-5026Z

4.9GHz to

5.9GHz 2W

InGaP Ampli-

fier

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Frequency of Operation

4900

5900

MHz

Output Power at 1dB Compression

32.5

dBm

5.9GHz

Small Signal Gain

8.8

dBm

5.9GHz

EVM at 25dBm Output Power

2.5

%

5.9GHz, 802.11a 54Mb/s

Third Order Suppression

-45.0

dBc

Noise Figure

5.4

dB

5.9GHz

Worst Case Input Return Loss

19.0

dB

5.7GHz to 5.9GHz

Worst Case Output Return Loss

13.0

dB

5.7GHz to 5.9GHz

Output Voltage Range

0.8

2.0

V

Quiescent Current

602

mA

Power Up Control Current

2.7

mA

100

Thermal Resistance

14.0

°C/W

Junction-to-Lead