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SZP-5026Z-EVB1 Datasheet(PDF) 1 Page - SIRENZA MICRODEVICES |
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SZP-5026Z-EVB1 Datasheet(HTML) 1 Page - SIRENZA MICRODEVICES |
1 / 14 page Features 1 of 14 Optimum Technology Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Product Description 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. RF MEMS SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor (HBT) power amplifier. It is designed with InGaP-on-GaAs device technol- ogy and fabricated with MOCVD for an ideal combination of low cost and high reli- ability. This product is specifically designed for use as a driver or final stage power amp for 802.16 equipment in the 4.9GHz to 5.9GHz bands. It is pre-matched on both ports to simplify external application circuit design. It features an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced surface-mount SOF-26 package. Active Bias RFIN RFOUT Power Detector Vbias Power Up/Down Control Vcc SZP-5026 P1dB=33dBm @ 5V 802.11a 54Mb/s Class AB Per- formance POUT=25dBm @ 2.5% EVM, 5.9GHz, 5V, 680mA On-Chip Input Power Detector Internally Prematched Input and Output Proprietary Low Thermal Resis- tance Package Power Up/Down Control<1 μs Applications 802.16 WiMAX Driver or Output Stage 5GHz 802.11 WLAN and ISM Applications EDS-105366 Rev C Preliminary RFMD Green, RoHS Compliant, Pb-Free Package: Proprietary SOF-26 SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Ampli- fier Parameter Specification Unit Condition Min. Typ. Max. Frequency of Operation 4900 5900 MHz Output Power at 1dB Compression 32.5 dBm 5.9GHz Small Signal Gain 8.8 dBm 5.9GHz EVM at 25dBm Output Power 2.5 % 5.9GHz, 802.11a 54Mb/s Third Order Suppression -45.0 dBc 5.9GHz, POUT=23dBm per tone Noise Figure 5.4 dB 5.9GHz Worst Case Input Return Loss 19.0 dB 5.7GHz to 5.9GHz Worst Case Output Return Loss 13.0 dB 5.7GHz to 5.9GHz Output Voltage Range 0.8 2.0 V POUT=10dBm to 33dBm Quiescent Current 602 mA VCC=5V Power Up Control Current 2.7 mA VPC=5V VCC Leakage Current 100 μAVCC=5V, VPC=0V Thermal Resistance 14.0 °C/W Junction-to-Lead Test Conditions: Z0=50Ω, VCC=5V, IQ=602mA, TBP=30°C |
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