STS8235 datasheet(3/7 Pages) SAMHOP

Part #	STS8235

Description	Dual N-Channel Enhancement Mode Field Effect Transistor

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Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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3 / 7 page

STS8235

Ver 1.0

www.samhop.com.tw

Aug,14,2008

3

2.0

1.8

1.6

1.4

1.2

1.0

0

100

T j ( °

C )

75

25

50

V G S =2.5V

ID=4A

125

150

V G S =4.5V

ID= 4.5A

60

50

40

30

20

10

1

VGS =4.5V

4

8

12

16

20

VG S = 2.5V

15

12

9

6

3

0

0.4

2.4

2.0

1.6

1.2

0.8

125 C

-55 C

25 C

20

16

12

8

4

0

V G S = 4.5V

V G S =2 V

V G S = 1.5V

0.5

1.0

1.5

2.0

2.5

3.0

0.4

0.2

1.6

1.4

1.2

1.0

0.8

0.6

125 150

V DS =V GS

ID=250uA

100

75

50

25

0

-25

-50

1.15

1.10

1.05

1.00

0.95

0.90

ID=250uA

0.85

125 150

100

75

50

25

0

-25

-50

VDS, Drain-to-Source Voltage(V)

Figure 1. Output Characteristics

VGS, Gate-to-Source Voltage(V)

Figure 2. Transfer Characteristics

ID, Drain Current(A)

Tj, Junction Temperature(° C )

Figure 3. On-Resistance vs. Drain Current

and Gate Voltage

Figure 4. On-Resistance Variation with Drain

Current and Temperature

Tj, Junction Temperature(° C )

Figure 5. Gate Threshold Variation

with Temperature

Tj, Junction Temperature(° C )

Figure 6. Breakdown Voltage Variation

with Temperature

V G S = 2.5V

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STS8235 Datasheet(PDF) 3 Page - SamHop Microelectronics Corp.

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