BQ4011MA-120 datasheet(4/14 Pages) TI

Part #	BQ4011MA-120

Description	128Kx8 Nonvolatile SRAM

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Manufacturer	TI [Texas Instruments]

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4

bq4013/Y

Recommended DC Operating Conditions (TA =TOPR)

Symbol

Parameter

Minimum

Typical

Maximum

Unit

Notes

VCC

Supply voltage

4.5

5.0

5.5

V

bq4013Y

4.75

5.0

5.5

V

bq4013

VSS

Supply voltage

0

V

VIL

Input low voltage

-0.3

-

0.8

V

VIH

Input high voltage

2.2

-

VCC + 0.3

V

Note:

Typical values indicate operation at TA = 25°C.

DC Electrical Characteristics (TA =TOPR, VCCmin ≤ VCC ≤ VCCmax)

Symbol

Parameter

Minimum

Typical

Maximum

Unit

Conditions/Notes

ILI

Input leakage current

-

± 1

µAVIN =VSS to VCC

ILO

Output leakage current

-

± 1

µA

CE =VIH or OE =VIH or

WE =VIL

VOH

Output high voltage

2.4

-

V

IOH = -1.0 mA

VOL

Output low voltage

-

0.4

V

IOL = 2.1 mA

ISB1

Standby supply current

-

4

7

mA

CE =VIH

ISB2

Standby supply current

-

2.5

4

mA

CE

≥ VCC - 0.2V,

0V

≤ VIN ≤ 0.2V,

or VIN

≥ VCC - 0.2V

ICC

Operating supply current

-

75

105

mA

Min. cycle, duty = 100%,

CE =VIL,II/O = 0mA

VPFD

Power-fail-detect voltage

4.55

4.62

4.75

V

bq4013

4.30

4.37

4.50

V

bq4013Y

VSO

Supply switch-over voltage

-

3

-

V

Note:

Typical values indicate operation at TA = 25°C, VCC = 5V.

Capacitance (TA = 25°C, F = 1MHz, VCC = 5.0V)

Symbol

Parameter

Minimum

Typical

Maximum

Unit

Conditions

CI/O

Input/output capacitance

-

10

pF

Output voltage = 0V

CIN

Input capacitance

-

10

pF

Input voltage = 0V

Note:

These parameters are sampled and not 100% tested.

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