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BQ4016YMC-70 Datasheet(PDF) 1 Page - Texas Instruments |
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BQ4016YMC-70 Datasheet(HTML) 1 Page - Texas Instruments |
1 / 11 page Features ® Data retention in the absence of power ® Automatic write-protection during power-up/power-down cycles ® Conventional SRAM operation; unlimited write cycles ® 10-year minimum data retention in absence of power ® Battery internally isolated until power is applied General Description The CMOS bq4016 is a nonvolatile 8,388,608-bit static RAM organized as 1,048,576 words by 8 bits. The in- tegral control circuitry and lithium energy source provide reliable non- volatility coupled with the unlimited write cycles of standard SRAM. The control circuitry constantly monitors the single 5V supply for an out-of-tolerance condition. When VCC falls out of tolerance, the SRAM is unconditionally write-protected to prevent an inadver tent w rite operation. At this time the integral energy source is switched on to sustain the memory until after VCC returns valid. The bq4016 uses extremely low standby current CMOS SRAMs, coupled with a small lithium coin cell to provide nonvolatility without long write-cycle times and the write- cycle limitations associated with EEPROM. The bq4016 has the same interface as industry-standard SRAMs and re- quires no external circuitry. Selection Guide Part Number Maximum Access Time (ns) Negative Supply Tolerance Part Number Maximum Access Time (ns) Negative Supply Tolerance bq4016MC -70 70 -5% bq4016YMC -70 70 -10% Pin Names A0–A19 Address inputs DQ0–DQ7 Data input/output CE Chip enable input OE Output enable input WE Write enable input VCC +5 volt supply input VSS Ground NC No connect Block Diagram 1024Kx8 Nonvolatile SRAM bq4016/bq4016Y Sept. 1996 B Pin Connections 1 |
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