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BQ4010MA-200 Datasheet(PDF) 2 Page - Texas Instruments |
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BQ4010MA-200 Datasheet(HTML) 2 Page - Texas Instruments |
2 / 14 page Functional Description When power is valid, the bq4010 operates as a standard CMOS SRAM. During power-down and power-up cycles, the bq4010 acts as a nonvolatile memory, automatically protecting and preserving the memory contents. Power-down/power-up control circuitry constantly monitors the VCC supply for a power-fail-detect threshold VPFD. The bq4010 monitors for VPFD = 4.62V typical for use in systems with 5% supply tolerance. The bq4010Y monitors for VPFD = 4.37V typical for use in systems with 10% supply tolerance. When VCC falls below the VPFD threshold, the SRAM automatically write-protects the data. All outputs become high impedance, and all inputs are treated as “don’t care.” If a valid access is in process at the time of power-fail detection, the memory cycle continues to com- pletion. If the memory cycle fails to terminate within time tWPT, write-protection takes place. As VCC falls past VPFD and approaches 3V, the control circuitry switches to the internal lithium backup supply, which provides data retention until valid VCC is applied. When VCC returns to a level above the internal backup cell voltage, the supply is switched back to VCC. After VCC ramps above the VPFD threshold, write-protection continues for a time tCER (120ms maximum) to allow for processor stabilization. Normal memory operation may resume after this time. The internal coin cell used by the bq4010 has an extremely long shelf life and provides data retention for more than 10 years in the absence of system power. As shipped from Benchmarq, the integral lithium cell is electrically isolated from the memory. (Self-discharge in this condition is approximately 0.5% per year.) Following the first application of VCC, this isolation is broken, and the lithium backup cell provides data retention on subsequent power-downs. Truth Table Mode CE WE OE I/O Operation Power Not selected H X X High Z Standby Output disable L H H High Z Active Read L H L DOUT Active Write LLX DIN Active Absolute Maximum Ratings Symbol Parameter Value Unit Conditions VCC DC voltage applied on VCC relative to VSS -0.3 to 7.0 V VT DC voltage applied on any pin excluding VCC relative to VSS -0.3 to 7.0 V VT ≤ VCC + 0.3 TOPR Operating temperature 0 to +70 °C Commercial -40 to +85 °C Industrial “N” TSTG Storage temperature -40 to +70 °C Commercial -40 to +85 °C Industrial “N” TBIAS Temperature under bias -10 to +70 °C Commercial -40 to +85 °C Industrial “N” TSOLDER Soldering temperature +260 °C For 10 seconds Note: Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation should be limited to the Recommended DC Operating Conditions detailed in this data sheet. Exposure to con- ditions beyond the operational limits for extended periods of time may affect device reliability. bq4010/bq4010Y Sept. 1996 D 6-2 |
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Similar Description - BQ4010MA-200 |
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