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2SC1156 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC1156 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC1156 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=300mA IB=30m A 1.2 V VBEsat Base-emitter saturation voltage IC=300mA IB=30m A 1.5 V V(BR)CBO Collector-base breakdown voltage IC=100μA;IE=0 90 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=100μA; IC=0 5 V ICBO Collector cut-off current VCB=90V; IE=0 1.0 μA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 μA hFE DC current gain IC=300mA ; VCE=4V 20 300 fT Transition frequency IE=100mA ; VCB=10V 70 MHz |
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