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2SC1516 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC1516 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC1516 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ,IB=0 35 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ,IC=0 5 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A 2.0 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.1A 1.5 V ICBO Collector cut-off current VCB=35V; IE=0 20 μA IEBO Emitter cut-off current VEB=5V; IC=0 20 μA hFE DC current gain IC=0.5A ; VCE=2V 60 200 fT Transition frequency IC=0.2A ; VCE=10V 110 MHz hFE Classifications B C 60-120 100-200 |
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