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2SC3220 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3220 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3220 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 230 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=0.5A 1.5 V ICBO Collector cut-off current ICEO Collector cut-off current At rated voltage 0.1 mA IEBO Emitter cut-off current At rated voltage 0.1 mA hFE-1 DC current gain IC=10A ; VCE=2V 15 hFE-2 DC current gain IC=1mA ; VCE=2V 5 fT Transition frequency IC=0.6A ; VCE=10V 20 MHz |
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