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2SC3892 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3892 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3892 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=200mA , IC=0 5 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=1.2A 5.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1.2A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 66 200 mA hFE DC current gain IC=1A ; VCE=5V 8 12 fT Transition frequency IC=0.1A ; VCE=10V 1 3 MHz COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 210 pF VF Diode forward voltage IF=5A 2.0 V ts Storage time 2.5 μs tf Fall time Resistive load ICP=5A ;IB1=1A;IB2=-2A;RL=40Ω 0.2 μs |
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