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2SD1795 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1795 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1795 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=10mA; IB=0 400 V VCE(sat) Collector-emitter saturation voltage IC=7A; IB=70mA 1.5 V VBE(sat) Base-emitter saturation voltage IC=7A; IB=70mA 2.0 V ICBO Collector cut-off current VCB=500V; IE=0 0.1 mA ICEO Collector cut-off current VCE=400V; IB=0 0.1 mA IEBO Emitter cut-off current VEB=12V; IC=0 100 mA hFE DC current gain IC=7A ; VCE=2V 150 fT Transition frequency IC=1A ; VCE=10V 10 MHz Switching times ton Turn-on time 2.0 μs ts Storage time 15 μs tf Fall time IC=7A;IB1=IB2=70mA, RL=10Ω;VBB2=4V 15 μs |
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