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BD744C Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BD744C Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD744C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A B -1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -15A; IB= -5A -3.0 V VBE(on)-1 Base-Emitter On Voltage IC= -5A ; VCE= -4V -1.0 V VBE(on)-2 Base-Emitter On Voltage IC= -15A ; VCE= -4V -3.0 V VCB= -110V; IE= 0 -0.1 ICBO Collector Cutoff Current VCB= -110V; IE= 0; TC= 125℃ -5.0 mA ICEO Collector Cutoff Current VCE= -60V; IB= 0 B -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.5 mA hFE-1 DC Current Gain IC= -1A ; VCE= -4V 40 hFE-2 DC Current Gain IC= -5A ; VCE= -4V 20 150 hFE-3 DC Current Gain IC= -15A ; VCE= -4V 5 Switching Times td Delay Time 20 ns tr Rise Time 120 ns ts Storage Time 600 ns tf Fall time IC= -5A; IB1= -IB2= -5A; VBE(off)= 4.2V; RL= 6Ω; tp= 20μs,DutyCycle≤ 2% 300 ns isc Website:www.iscsemi.cn 2 |
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