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BD710 Datasheet(PDF) 2 Page - Savantic, Inc. |
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BD710 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon PNP Power Transistors BD708 BD710 BD712 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD708 -60 BD710 -80 VCEO(SUS) Collector-emitter sustaining voltage BD712 IC=-0.1A, IB=0 -100 V VCEsat Collector-emitter saturation voltage IC=-4A ,IB=-0.4A -1.0 V VBE Base-emitter voltage IC=-4A , VCE=-4V -1.5 V BD708 VCB=-60V, IE=0 TC=150 -0.1 -1.0 BD710 VCB=-80V, IE=0 TC=150 -0.1 -1.0 ICBO Collector cut-off current BD712 VCB=-100V, IE=0 TC=150 -0.1 -1.0 mA BD708 VCE=-30V, IB=0 BD710 VCE=-40V, IB=0 ICEO Collector cut-off current BD712 VCE=-50V, IB=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 mA hFE-1 DC current gain IC=-0.5A ; VCE=-2V 40 120 400 hFE-2 DC current gain only for BD708 IC=-2A ; VCE=-2V 30 hFE-3 DC current gain IC=-4A ; VCE=-4V 15 150 BD708 5 10 BD710 8 hFE-4 DC current gain BD712 IC=-10A ; VCE=-4V 8 fT Transition frequency IC=-0.3A;VCE=-3V; 3 MHz |
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