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2SD1497 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SD1497 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1497 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 7 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA; RBE=; 600 V VCEsat Collector-emitter saturation voltage IC=5A; IB=1A 5.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=1A 1.5 V ICEX Collector cut-off current VCE=1500V; VBE=1.5V 1.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE-1 DC current gain IC=0.3A ; VCE=5V 10 30 hFE-2 DC current gain IC=5A ; VCE=5V 5 tf Fall time ICP=4A;IB1=1.3A; LB=0 2.0 µs |
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