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2SC3092 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SC3092 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3092 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=@ 500 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 800 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCE(sat) Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V VBE(sat) Base-emitter saturation voltage IC=3A; IB=0.6A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE-1 DC current gain IC=0.6A ; VCE=5V 15 50 hFE-2 DC current gain IC=3A ; VCE=5V 8 COB Output capacitance IE=0 ; VCB=10V, f=1MHz 80 pF fT Transition frequency IC=0.6 A ; VCE=10V 18 MHz Switching times ton Turn-on time 0.5 µs ts Storage time 3.0 µs tf Fall time IC=4A; IB1=0.8A;IB2=-1.6A VCC=200V ,RL=50F 0.3 µs hFE-1 classifications L M N 15-30 20-40 30-50 |
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