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2SD2000 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SD2000 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 4 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD2000 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA , IB=0 60 V VCEsat Collector-emitter saturation voltage IC=4A;IB=0.4A 1.5 V VBEsat Base-emitter saturation voltage IC=4A;IB=0.4A 2.0 V ICBO Collector cut-off current VCB=80V;IE=0 100 µA IEBO Emitter cut-off current VEB=6V; IC=0 100 µA hFE-1 DC current gain IC=1A ; VCE=4V 70 250 hFE-2 DC current gain IC=4A ; VCE=4V 20 fT Transition frequency IC=0.2A; VCE=12V;f=10MHz 80 MHz Switching times ton Turn-on time 0.3 µs ts Storage time 1.0 µs tf Fall time IC=4A ;IB1=0.4A IB2=-0.4A;VCC=50V 0.2 µs hFE-1 Classifications Q P 70-150 120-250 |
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