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2SD2014 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SD2014 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD2014 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 80 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=3mA 1.5 V VBEsat Base-emitter saturation voltage IC=3A ;IB=3mA 2.0 V ICBO Collector cut-off current VCB=120V; IE=0 10 µA IEBO Emitter cut-off current VEB=6V; IC=0 10 mA hFE DC current gain IC=3A ; VCE=2V 2000 fT Transition frequency IE=-0.1A ; VCE=12V 75 MHz COB Collector output capacitance f=1MHz;VCB=10V 45 pF Switching times ton Turn-on time 1.0 µs ts Storage time 4.0 µs tf Fall time IC=3.0A; IB1=-IB2=10mA VCC=30V ,RL=10C 1.5 µs |
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