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2SD2125 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SD2125 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD2125 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=200mA , IC=0 5 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A 3.0 5.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 µA hFE-1 DC current gain IC=1A ; VCE=5V 8 20 hFE-2 DC current gain IC=5A ; VCE=5V 5 fT Transition frequency IC=0.1A ; VCE=10V 3 MHz COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 165 pF VF Diode forward voltage IF=6A 2.0 V tf Fall time ICP=5A ;IBL=1A;VCC=100V 0.5 µs |
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