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BU2508D Datasheet(PDF) 2 Page - Savantic, Inc. |
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BU2508D Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors BU2508D CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0,L=25mH 700 V V(BR)EBO Emitter-base breakdown voltage IE=600mA; IC=0 7.5 13.5 V VCE(sat-1) Collector-emitter saturation voltage IC=4.5A; IB=1.1A 5.0 V VCE(sat-2) Collector-emitter saturation voltage IC=4.5A; IB=1.29A 1.0 V VBE(sat) Base-emitter saturation voltage IC=4.5A; IB=1.7A 1.3 V ICES Collector cut-off current VCE=rated; VBE=0 T=125°C 1.0 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 140 390 mA hFE-1 DC current gain IC=1A ; VCE=5V 7 13 23 hFE-2 DC current gain IC=4.5A ; VCE=1V 4 5.5 7.5 VF Diode forward voltage IF=4.5A 1.6 2.0 V CC Collector capacitance VCB=10V;f=1MHz 80 pF |
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