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BUL56B Datasheet(PDF) 2 Page - Savantic, Inc. |
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BUL56B Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors BUL56B CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=10mA ;IB=0 100 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 250 V V(BR)EBO Emitter-base breakdwon voltage IE=1mA ;IC=0 10 V VCEsat-1 Collector-emitter saturation voltage IC=1A ;IB=0.1A 0.2 V VCEsat-2 Collector-emitter saturation voltage IC=7A ;IB=0.7A 0.6 V VCEsat-3 Collector-emitter saturation voltage IC=12A; IB=1.2A 1.2 V VBEsat-1 Base-emitter saturation voltage IC=7A; IB=0.7A 1.2 V VBEsat-2 Base-emitter saturation voltage IC=12A; IB=1.2A 1.8 V ICBO Collector cut-off current VCB=250V; IE=0 TC=125 10 100 µA ICEO Collector cut-off current VCE=90V ;IB=0 100 µA IEBO Emitter cut-off current VEB=9V; IC=0 TC=125 10 100 µA hFE-1 DC current gain IC=0.3A ; VCE=5V 30 90 hFE-2 DC current gain IC=5A ; VCE=5V 25 60 hFE-3 DC current gain IC=12A ; VCE=1V 5 fT Transition frequency IC=0.2A ; VCE=4V 20 MHz Cob Output capacitance VCB=100V ;f=1MHz 100 pF |
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