2N3906

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description

Designed for general purpose switching and

amplifier applications.

Pinning

1 = Emitter

2 = Base

3 = Collector

TO-92

.022(0.56)

.014(0.36)

.050

(1.27)

.148(3.76)

.132(3.36)

Typ

.190(4.83)

.170(4.33)

.100

(2.54)

Typ

.050

(1.27)

Typ

.022(0.56)

.014(0.36)

.190(4.83)

.170(4.33)

.500

(12.70)

Min

3 2 1

Dimensions in inches and (millimeters)

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

-40

V

Collector-Emitter Voltage

-40

V

Emitter-Base Voltage

-5

V

Collector Current

-200

mA

Total Power Dissipation

625

mW

Junction Temperature

+150

o

C

Storage Temperature

-55 to +150

o

C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector-Base Breakdown Volatge

-40

-

-

V

Collector-Emitter Breakdown Voltage

-40

-

-

V

Emitter-Base Breakdown Volatge

-5

-

-

V

Collector Cutoff Current

-

-

-50

nA

-

-

-0.25

V

-

-

-0.4

V

-0.65

-

-0.85

V

-

-

-0.95

V

60

-

-

-

80

-

-

-

100

-

300

-

60

-

-

-

30

-

-

-

Transition Frequency

250

-

-

MHz

Output Capacitance

-

-

4

pF

Electrical Characteristics

(1)Pulse Test: Pulse Width

380

µs, Duty Cycle 2%