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SI4164DY Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI4164DY Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 7 page Vishay Siliconix Si4164DY New Product Document Number: 68870 S-82015-Rev. A, 01-Sep-08 www.vishay.com 1 N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • DC/DC Conversion - Low-Side Switch • Notebook PC •Gaming PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (Typ.) 30 0.0032 at VGS = 10 V 30 26.5 nC 0.0039 at VGS = 4.5 V 26.3 SO-8 SD SD SD GD 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4164DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET G D S Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 30 A TC = 70 °C 22.6 TA = 25 °C 21.5b, c TA = 70 °C 17.1b, c Pulsed Drain Current IDM 70 Continuous Source-Drain Diode Current TC = 25 °C IS 5.4 TA = 25 °C 2.7b, c Single Pulse Avalanche Current L = 0.1 mH IAS 40 Avalanche Energy EAS 80 mJ Maximum Power Dissipation TC = 25 °C PD 6.0 W TC = 70 °C 3.3 TA = 25 °C 3.0b, c TA = 70 °C 1.9b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 33 42 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 16 21 RoHS COMPLIANT |
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