2N2907A datasheet(4/5 Pages) SECOS

Part #	2N2907A

Description	PNP Silicon General Purpose Transistor

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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2N2907A

PNP Silicon

General Purpose Transistor

http://www.SeCoSGmbH.com

Elektronische Bauelemente

Figure 7. Frequency Effects

f, FREQUENCY (kHz)

10

0.01

Figure 8. Source Resistance Effects

Rs, SOURCE RESISTANCE (OHMS)

f = 1.0 kHz

IC = -50 µA

-100 µA

-500 µA

-1.0 mA

Rs = OPTIMUM SOURCE RESISTANCE

8.0

6.0

4.0

2.0

0

0.02 0.05 0.1 0.2

0.5 1.0 2.0

5.0 10 20

50 100

10

8.0

6.0

4.0

2.0

0

50 100 200

500 1.0 k 2.0 k

5.0 k 10 k 20 k

50 k

IC = -1.0 mA, Rs = 430 Ω

-500 µA, Rs = 560 Ω

-50 µA, Rs = 2.7 kΩ

-100 µA, Rs = 1.6 kΩ

Figure 9. Capacitances

REVERSE VOLTAGE (VOLTS)

30

Figure 10. Current–Gain — Bandwidth Product

IC, COLLECTOR CURRENT (mA)

-0.1

2.0

Figure 11. “On” Voltage

IC, COLLECTOR CURRENT (mA)

-1.0

Figure 12. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = -10 V

RqVC for VCE(sat)

20

10

7.0

5.0

3.0

-0.2 -0.3 -0.5

-1.0

-2.0 -3.0 -5.0

-10

-20

-30

400

300

200

100

80

60

40

30

20

-1.0 -2.0

-5.0 -10 -20

-50 -100 -200

-500 -1000

-0.8

-0.6

-0.4

-0.2

0

-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500

+0.5

0

-0.5

-1.0

-1.5

-2.0

-2.5

-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500

Ceb

Ccb

VCE = -20 V

TJ = 25°C

RqVB for VBE

01-Jun-2002 Rev. A

Page 4 of 5

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