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RJK03B9DPA Datasheet(PDF) 3 Page - Renesas Technology Corp |
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RJK03B9DPA Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 7 page RJK03B9DPA REJ03G1791-0310 Rev.3.10 Apr 03, 2009 Page 3 of 6 Main Characteristics 100 0 2 468 10 20 16 12 8 4 0 12 3 4 5 10 3 1 30 300 1 10 100 1000 3 400 300 200 0 4 8 12 16 20 10 A 100 30 10 V 5 A 40 30 20 10 0 50 100 150 200 0.1 1 10 100 10 100 1000 1 0.1 PW = 10 ms 1 ms 2.6 V 2.8 V 3.0V 10 V 4.5 V 20 16 12 8 4 Case Temperature Tc (°C) Power vs. Temperature Derating Drain to Source Voltage VDS (V) Maximum Safe Operation Area 10 µs Tc = 25 °C 1 shot Pulse Operation in this area is limited by RDS(on) Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics VDS = 10 V Pulse Test Pulse Test VGS = 2.4 V Tc = 75°C 25°C –25°C Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current Pulse Test Pulse Test ID = 20 A VGS = 4.5 V |
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