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2SC2412K Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC2412K Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page  Any changing of specification will not be informed individual 2SC2412K NPN Silicon General Purpose Transistor FEATURES Expitaxial planar type NPN Silicon Teansistor STRUCTURE Low Cob. n n n n n Cob=2.0pF Compements the 2SA1037K n RoHS Compliant Product Dim Min Max A 2.70 3.10 B 1.30 1.70 C 1.00 1.30 D 0.35 0.50 G 1.70 2.30 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 1.25 1.65 S 2.25 3.00 All Dimension in mm SC-59 S G D B L A 1 3 2 Top View H C J K 2 1 3 http://www.SeCoSGmbH.com Elektronische Bauelemente Emitter Base Collector ! ! ! ! Absolute maximum (Ta=25 °C) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Parameter VCBO VCEO VEBO PC Tj Tstg 60 V V V A W °C °C 50 7 0.15 IC 0.2 150 −55~+150 Symbol Limits Unit hFE values are classified as follows : Item Q R S hFE 120~270 180~390 270~560 ! ! ! ! Electrical characteristics (Ta=25 °C) Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Output capacitance Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 60 50 7 − − 120 − − − − − − − − − − 180 2 − − − 0.1 0.1 560 0.4 − 3.5 VIC=50 µA IC=1mA IE=50 µA VCB=60V VEB=7V VCE=6V, IC=1mA IC/IB=50mA/5mA VCE=12V, IE= −2mA, f=100MHz VCE=12V, IE=0A, f=1MHz V V µA µA − V MHz pF Typ. Max. Unit Conditions Transition frequency 01-Jun-2002 Rev. A Page 1 of 3 Marking B Q B R B S A suffix of "-C" specifies halogen & lead-free |
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