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STT2603 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # STT2603
Description  P-Channel Enhancement Mode Power Mos.FET
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

STT2603 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
STT2603
-5
A, -20V,RDS(ON) 65m
P-Channel Enhancement Mode Power Mos.FET
Absolute Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Continuous Drain Current (Note 3)
Pulsed Drain Current (Note 1,2)
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
The S
RoHS Compliant Product
TT2603
Ω
Description
utilized advanced processing techniques to achieve the lowest
possible on-resistance, extremely efficient and cost-effectiveness device.
Features
* Small package outline
* Simple drive requirement
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
industrial surface
mount application .
The STT2603 is universally used for all commercial
Parameter
Symbol
Ratings
Unit
Thermal Data
Parameter
Symbol
Ratings
Unit
Thermal Resistance Junction-ambient (Note 3) (Max)
A
V
V
A
A
ID@TA=70
/W
C
W / C
C
W
VDS
VGS
ID@TA=25
IDM
PD@TA=25
Tj, Tstg
Rthj-a
-20
±
12
-20
-5
-4
2
0.016
-55~+150
62.5
S
D
2603
Date Code
1
5
2
3
4
6
01-Jun-2002 Rev. A
Page 1 of 4
D
D
D
G
S
G
D
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
1.10 MAX.
L
0.45 REF.
A1
0
0.10
L1
0.60 REF.
A2
0.70
1.00
10°
c
0.12 REF.
b
0.30
0.50
D
2.70
3.10
e
0.95 REF.
E
2.60
3.00
e1
1.90 REF.
E1
1.40
1.80


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