Dated : 25/05/2006
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
ST 2SB772T
PNP SILICON EPITAXIAL POWER TRANSISTOR
These devices are intended for use in audio
frequency power amplifier and low speed switching
applications
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
-VCBO
40
V
Collector Emitter Voltage
-VCEO
30
V
Emitter Base Voltage
-VEBO
5
V
Collector Current - DC
Collector Current - Pulse
1)
-IC
-IC
3
7
A
A
Base Current - DC
-IB
0.6
A
Total Power Dissipation @ TC = 25 OC
PD
10
W
Total Power Dissipation @ TA = 25 OC
PD
1.0
W
Operating and Storage Junction Temperature Range
TJ, Ts
- 65 to + 150
O
C
1) PW=10ms, Duty Cycle ≤ 50%
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at -VCE = 2 V, -IC = 20 mA
at -VCE = 2 V, -IC = 1 A
R
Q
P
E
hFE
hFE
hFE
hFE
hFE
30
60
100
160
200
-
-
-
-
-
-
120
200
320
400
-
-
-
-
-
Collector Emitter Breakdown Voltage
at -IC = 1 mA
-V(BR)CEO
30
-
-
V
Collector Base Breakdown Voltage
at -IC = 1 mA
-V(BR)CBO
40
-
-
V
Emitter Base Breakdown Voltage
at -IE = 1 mA
-V(BR)EBO
5
-
-
V
Collector Cutoff Current
at -VCB = 30 V
-ICBO
-
-
1
µA
Emitter Cutoff Current
at -VEB = 3 V
-IEBO
-
-
1
µA
Collector Emitter Saturation Voltage
at -IC = 2 A, -IB = 200 mA
-VCE(sat)
-
-
0.5
V
Base Emitter Saturation Voltage
at -IC = 2 A, -IB = 200 mA
-VBE(sat)
-
-
2
V
Output Capacitance
at -VCB = 10 V, f = 1 MHz
CO
-
55
-
pF
Current Gain Bandwidth Product
at -IC = 100 mA, -VCE = 5 V
fT
-
80
-
MHz
E
B
C
TO-126 Plastic Package
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