LESHAN RADIO COMPANY, LTD.

L74VHC1GT14

DEVICE JUNCTION TEMPERATURE VERSUS

TIME TO 0.1% BOND FAILURES

Junction

Time,

Time,

Temperature °C

Hours

Years

80

1,032,200

117.8

90

419,300

47.9

100

178,700

20.4

110

79,600

9.4

120

37,000

4.2

130

17,800

2.0

140

8,900

1.0

Figure 3. Failure Rate vs. Time Junction Temperature

1

1

10

100

1000

MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

DC Supply Voltage

– 0.5 to + 7.0

V

DC Input Voltage

– 0.5 to +7.0

V

DC Output Voltage

– 0.5 to +7.0

V

High or Low State

Input Diode Current

–20

mA

Output Diode Current

V

+20

mA

DC Output Current, per Pin

+ 25

mA

+50

mA

Power dissipation in still air

SC–88A, TSOP–5

200

mW

θ

JA

Thermal resistance

SC–88A, TSOP–5

333

°C/W

Lead Temperature, 1 mm from Case for 10 s

260

°C

Junction Temperature Under Bias

+ 150

°C

Storage temperature

–65 to +150

°C

ESD Withstand Voltage

Human Body Model (Note 2)

>2000

V

Machine Model (Note 3)

> 200

Charged Device Model (Note 4)

N/A

Latch–Up Performance

± 500

mA

1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions

beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is

not implied. Functional operation should be restricted to the Recommended Operating Conditions.

2. Tested to EIA/JESD22–A114–A

3. Tested to EIA/JESD22–A115–A

4. Tested to JESD22–C101–A

5. Tested to EIA/JESD78

TIME, YEARS

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Min

Max

Unit

DC Supply Voltage

3.0

5.5

V

DC Input Voltage

0.0

5.5

V

DC Output Voltage

0.0

5.5

V

High Low State

0.0

Operating Temperature Range

– 55

+ 125

°C

Input Rise and Fall Time

V

0

100

ns/V

V

0

20

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