Dated : 27/12/2007
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
BC212
PNP Silicon Epitaxial Planar Transistor
for general purpose amplifier
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
-VCBO
60
V
Collector Emitter Voltage
-VCEO
50
V
Emitter Base Voltage
-VEBO
5
V
Collector Current
-IC
300
mA
Total Power Dissipation
Ptot
625
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
- 55 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at -VCE = 5 V, -IC = 10 µA
at -VCE = 5 V, -IC = 2 mA
hFE
hFE
40
60
-
300
-
-
Collector Base Cutoff Current
at -VCB = 30 V
-ICBO
-
15
nA
Emitter Base Cutoff Current
at -VEB = 4 V
-IEBO
-
15
nA
Collector Base Breakdown Voltage
at -IC = 10 µA
-V(BR)CBO
60
-
V
Collector Emitter Breakdown Voltage
at -IC = 2 mA
-V(BR)CEO
50
-
V
Emitter Base Breakdown Voltage
at -IE = 10 µA
-V(BR)EBO
5
-
V
Collector Emitter Saturation Voltage
at -IC = 100 mA, -IB = 5 mA
-VCE(sat)
-
0.6
V
Base Emitter Saturation Voltage
at -IC = 100 mA, -IB = 5 mA
-VBE(sat)
-
1.1
V
Base Emitter On Voltage
at -VCE = 5 V, -IC = 2 mA
-VBE(on)
0.6
0.72
V
Gain Bandwidth Product
at -VCE = 5 V, -IC = 10 mA, f = 100 MHz
fT
200
-
MHz
Output Capacitance
at -VCB = 10 V, f = 1 MHz
CCBO
-
10
pF
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
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