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EMP111 Datasheet(PDF) 1 Page - Excelics Semiconductor, Inc. |
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EMP111 Datasheet(HTML) 1 Page - Excelics Semiconductor, Inc. |
1 / 3 page EMP111 UPDATED 10/05/2004 7.0 – 9.0 GHz Power Amplifier MMIC Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 3 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised October 2004 Dimension: 1130um X 2250um Thickness: 85um + 13um FEATURES • 7.0 – 9.0 GHz Operating Frequency Range • 27.0dBm Output Power at 1dB Compression • 18.0 dB Typical Small Signal Gain • -40dBc OIMD3 @Each Tone Pout 17 dBm APPLICATIONS • Point-to-point and point-to-multipoint radio • Military Radar Systems Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Tb = 25 °C, 50 ohm, Vds = 7 V, Idsq = 400 mA, Unless Otherwise Specified) SYMBOL PARAMETER/TEST CONDITIONS MIN TYP MAX UNITS F Operating Frequency Range 7.0 9.0 GHz P1dB Output Power at 1dB Gain Compression 26.0 27.0 dBm Gss Small Signal Gain 15.0 18.0 dB OIMD3 Output 3 rd Order Intermodulation Distortion @∆f=10MHz, Each Tone Pout 17dBm, 7V, 60%+10%Idss -41 -38 dBc Input RL Input Return Loss -12 -8 dB Output RL Output Return Loss -6 dB Idss Saturated Drain Current Vds =3V, VGS =0V 475 620 750 mA Vds Drain to Source Voltage 7 8 V NF Noise Figure @8GHz 8 dB Rth Thermal Resistance (Au-Sn Eutectic Attach) 22 oC/W Tb Operating Base Plate Temperature - 35 + 85 ºC MAXIMUM RATINGS AT 25°C1,2 SYMBOL CHARACTERISTIC ABSOLUTE CONTINUOUS Vds Drain to Source Voltage 12V 8 V VGS Gate to Source Voltage -8V - 4 V Ids Drain Current Idss 650mA IGSF Forward Gate Current 57mA 9.5 mA PIN Input Power 24dBm @ 3dB compression TCH Channel Temperature 175°C 150°C TSTG Storage Temperature -65/175°C -65/150°C PT Total Power Dissipation 6.2W 5.2W 1. Operating the device beyond any of the above rating may result in permanent damage. 2. Bias conditions must also satisfy the following equation Vds*Ids < (TCH –Tb)/RTH |
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