EMP114

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

page 1 of 2

Revised September 2004

ISSUED DATE: 09-09-04

7.0 – 9.0 GHz Power Amplifier MMIC

Dimension: 2000um X 2650um

Thickness: 75um + 13um

FEATURES

•

7.0 – 9.0 GHz Operating Frequency Range

•

30.0dBm Output Power at 1dB Compression

•

19.0 dB Typical Small Signal Gain

•

-40dBc OIMD3 @Each Tone Pout 20dBm

APPLICATIONS

•

Point-to-point and point-to-multipoint radio

•

Military Radar Systems

Caution! ESD sensitive device.

SYMBOL

PARAMETER/TEST CONDITIONS

MIN

TYP

MAX

UNITS

F

Operating Frequency Range

7.0

9.0

GHz

P1dB

Output Power at 1dB Gain Compression

28.5

30.0

dBm

Gss

Small Signal Gain

16.0

19.0

dB

OIMD3

Output 3

@∆f=10MHz, Each Tone Pout 20dBm

-40

dBc

Input RL

Input Return Loss

-12

dB

Output RL

Output Return Loss

-6

dB

Idss

Saturate Drain Current

V

992

1240

1488

mA

Power Supply Voltage

7

8

V

Rth

Thermal Resistance (Au-Sn Eutectic Attach)

7.5

Tb

Operating Base Plate Temperature

- 35

+ 85

ºC

ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION

1,2

SYMBOL

CHARACTERISTIC

VALUE

Drain to Source Voltage

8 V

Gate to Source Voltage

- 4 V

Drain Current

Idss

Forward Gate Current

18 mA

Input Power

@ 3dB compression

Channel Temperature

150°C

Storage Temperature

-65/150°C

Total Power Dissipation

15.2W

1. Operating the device beyond any of the above rating may result in permanent damage.