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EMP214-Q5 Datasheet(PDF) 1 Page - Excelics Semiconductor, Inc.

Part # EMP214-Q5
Description  12.50 - 15.50 GHz Surface-Mounted PA
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Manufacturer  EXCELICS [Excelics Semiconductor, Inc.]
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EMP214-Q5 Datasheet(HTML) 1 Page - Excelics Semiconductor, Inc.

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EMP214-Q5
UPDATED 04/24/2008
12.50 – 15.50 GHz Surface-Mounted PA
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Page 1 of 5
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
May 2008
FEATURES
12.5 – 15.5 GHz Operating Frequency Range
29.5dBm Output Power at 1dB Compression
14.0 dB Typical Small Signal Gain
-41dBc OIMD3 @Each Tone Pout 18.5dBm
APPLICATIONS
Point-to-point and point-to-multipoint radio
Military Radar Systems
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, VDD=7V, IDQ=750mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX
UNITS
EMP214 – Q5
12.5
15.5
EMP214H – Q5
13.5
15.5
F
Operating Frequency Range
EMP214L – Q5
12.5
14.5
GHz
P1dB
Output Power at 1dB Gain Compression
28.5
29.5
dBm
Gss
Small Signal Gain
12.0
14.0
dB
OIMD3
Output 3
rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 18.5dBm
Ids=60%±10%Idss
-41
-38
dBc
Input RL
Input Return Loss
-13
-10
dB
Output RL
Output Return Loss
-13
-10
dB
Idss
Saturate Drain Current VDS =3V, VGS =0V
920
1150
1380
mA
VDD
Power Supply Voltage
7
V
Rth
Thermal Resistance
1
12
oC/W
Tb
Operating Base Plate Temperature
-35
+75
ºC
MAXIMUM RATINGS AT 25°C2,3
SYMBOL
CHARACTERISTIC
ABSOLUTE
CONTINUOUS
VDS
Drain to Source Voltage
12 V
8 V
VGS
Gate to Source Voltage
-8 V
-4 V
IDD
Drain Current
Idss
1300mA
IGSF
Forward Gate Current
114mA
19mA
PIN
Input Power
27dBm
@ 3dB compression
TCH
Channel Temperature
175°C
150°C
TSTG
Storage Temperature
-65/175°C
-65/150°C
PT
Total Power Dissipation
12.4W
10.4W
1. Measured result when used with Excelics recommended evaluation board.
2. Operating the device beyond any of the above rating may result in permanent damage.
3. Bias conditions must also satisfy the following equation VDS*IDS < (TCH –THS)/RTH; where THS = Base Plate temperature


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