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BC450A Datasheet(PDF) 1 Page - Motorola, Inc |
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BC450A Datasheet(HTML) 1 Page - Motorola, Inc |
1 / 6 page 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data High Voltage Transistors PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –100 Vdc Collector – Base Voltage VCBO –100 Vdc Emitter – Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –300 mAdc Total Device Dissipation @ TA = 25°C Derate above 25 °C PD 625 5.0 mW mW/ °C Total Device Dissipation @ TC = 25°C Derate above 25 °C PD 1.5 12 Watt mW/ °C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = –1.0 mAdc, IB = 0) V(BR)CEO –100 — — Vdc Collector – Base Breakdown Voltage (IC = –100 mA, IE = 0) V(BR)CBO –100 — — Vdc Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) V(BR)EBO –5.0 — — Vdc Collector Cutoff Current (VCB = –80 Vdc, IE = 0) ICBO — — –100 nAdc ON CHARACTERISTICS* DC Current Gain (IC = –2.0 mA, VCE = –5.0 V) BC450 BC450A (IC = –10 mA, VCE = –5.0 V) BC450 BC450A (IC = –100 mA, VCE = –5.0 V) BC450 BC450A hFE 50 120 50 100 50 60 — — — — — — 460 220 — — — — — 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle 2.0%. Order this document by BC450/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BC450,A CASE 29–04, STYLE 17 TO–92 (TO–226AA) 1 2 3 © Motorola, Inc. 1996 COLLECTOR 1 2 BASE 3 EMITTER |
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