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BC450A Datasheet(PDF) 1 Page - Motorola, Inc

Part # BC450A
Description  High Voltage Transistors
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

BC450A Datasheet(HTML) 1 Page - Motorola, Inc

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Motorola Small–Signal Transistors, FETs and Diodes Device Data
High Voltage Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
–100
Vdc
Collector – Base Voltage
VCBO
–100
Vdc
Emitter – Base Voltage
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–300
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
Watt
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
–100
Vdc
Collector – Base Breakdown Voltage
(IC = –100 mA, IE = 0)
V(BR)CBO
–100
Vdc
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
V(BR)EBO
–5.0
Vdc
Collector Cutoff Current
(VCB = –80 Vdc, IE = 0)
ICBO
–100
nAdc
ON CHARACTERISTICS*
DC Current Gain
(IC = –2.0 mA, VCE = –5.0 V)
BC450
BC450A
(IC = –10 mA, VCE = –5.0 V)
BC450
BC450A
(IC = –100 mA, VCE = –5.0 V)
BC450
BC450A
hFE
50
120
50
100
50
60
460
220
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle 2.0%.
Order this document
by BC450/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BC450,A
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
1
2
3
© Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER


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