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2SA1186 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SA1186 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 4 page JMnic Product Specification 2 Silicon PNP Power Transistors 2SA1186 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -150 V VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -2.0 V ICBO Collector cut-off current VCB=-150V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC current gain IC=-3A ; VCE=-4V 50 Cob Output capacitance IE=0 ; VCB=-80V;f=1MHz 110 pF fT Transition frequency IE=1A ; VCE=-12V 60 MHz Switching times ton Turn-on time 0.25 μs ts Storage time 0.80 μs tf Fall time IC=-5A;RL=12Ω IB1=-IB2=-0.5A VCC=-60V 0.20 μs hFE Classifications O P Y 50-100 70-140 90-180 |
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