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TLV2332Y Datasheet(PDF) 3 Page - Texas Instruments |
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TLV2332Y Datasheet(HTML) 3 Page - Texas Instruments |
3 / 33 page TLV2332, TLV2332Y, TLV2334, TLV2334Y LinCMOS ™ LOW-VOLTAGE MEDIUM-POWER OPERATIONAL AMPLIFIERS SLOS189 – FEBRUARY 1997 3 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TLV2334Y chip information This chip, when properly assembled, displays characteristics similar to the TLV2334. Thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive epoxy or a gold-silicon preform. BONDING PAD ASSIGNMENTS + – 1OUT 1IN + 1IN – VDD (4) (6) (3) (2) (5) (1) 2IN + 2IN – 2OUT (11) VDD– /GND + – 3OUT 3IN + 3IN – (13) (10) (9) (12) (8) – + (14) 4OUT 4IN + 4IN – + – (7) CHIP THICKNESS: 15 MILS TYPICAL BONDING PADS: 4 × 4 MILS MINIMUM TJmax = 150°C TOLERANCES ARE ±10%. ALL DIMENSIONS ARE IN MILS. 68 108 (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) (12) (13) (14) |
Similar Part No. - TLV2332Y |
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Similar Description - TLV2332Y |
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