CHM9424JPT datasheet(2/2 Pages) CHENMKO

Part #	CHM9424JPT

Description	P-Channel Enhancement Mode Field Effect Transistor

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Manufacturer	CHENMKO [Chenmko Enterprise Co. Ltd.]

Direct Link	http://www.chenmko.com

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ELECTRICAL CHARACTERISTIC ( CHM9424JPT )

Electrical Characteristics T

A = 25°C unless otherwise noted

Symbol

Parameter

Conditions

Min

Typ

Max

Units

-1

OFF CHARACTERISTICS

BVDSS

Drain-Source Breakdown Voltage

25

V

ON CHARACTERISTICS

GS

g

= 0 V, ID

FS

Forward Transconductance

V

= -250 µA

DS

nA

-20

= -10V

V

nA

, I

I

D

DSS

S

= -7.7

Zero Gate Voltage Drain Current

I

V

R

DS

DS(ON)

Gate-Body Leakage

Static Drain-Source On-Resistance

=

m

Ω

Gate-Body Leakage

VGS=-4.5V, ID=-7.7A

-24 V,

V

GS

= 8V,

= 0 V

VDS

µ

= 0 V

A

SWITCHING

+100

CHARACTERISTICS

-100

VGS = -8V, VDS

Qgs

= 0 V

Gate-Source Charge

6

Q gd

Gate-Drain Charge

t

V

on

GS

Turn-On Time

(th)

nS

Gate Threshold Voltage

V

DD

DS

= -6V

I

= V

D

GS

= -1.0A

, I

,

D

V

= -250 µA

GS

= -4.5 V

80

tr

-0.6

Rise Time

V

130

VGS=-2.5V, ID=-6.6A

400

tf

Fall Time

250

Qg

Total Gate Charge

14

VDS=-6V, ID=-7.7A

VGS=-4.5V

Turn-Off Time

toff

RGEN= 6

Ω

(Note 2)

(Note 4)

-1

23

S

nC

60

90

310

190

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

45

54

VSD

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage IS = -2.3A, VGS= 0 V

-2.3

-1.2

A

V

(Note 1)

(Note 2)

35

20

29

GSSF

I

GSSR

Dynamic Characteristics

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Ciss

Coss

Crss

VDS = -10V, VGS = 0V,

f = 1.0 MHz

2130

760

127

pF

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