TMS3473B

PARALLEL DRIVER

SOCS022B – NOVEMBER 1990

Copyright

1

POST OFFICE BOX 655303

Resistor Control

description

The TMS3473B is a monolithic CMOS integrated

circuit designed to drive the parallel image-area

gate (IAG), parallel storage-area gate (SAG), and

antiblooming gate (ABG) inputs of the Texas Instruments (TI

™) virtual-phase CCD image sensors. The

TMS3473B interfaces the CCD image sensor to a user-defined timing generator; it receives TTL-input signals

from the timing generator and outputs level-shifted and slew-rate-adjusted signals to the image sensor.

The TMS3473B allows operation of the CCD image sensor in either the interlace or noninterlace mode. When

midlevel voltages. DC inputs to ABLVL and IALVL determine the midlevel voltages that can be output on ABOUT

and IAOUT, respectively. A high-logic level on MIDSEL causes ABOUT to output its midlevel voltage; a low-logic

level on MIDSEL causes IAOUT to output its midlevel voltage if the interlace mode is selected.

through external resistors. The larger the resistor values, the longer the rise and fall times are.

A low-logic level on PD causes the TMS3473B to power down and all outputs to assume their low levels (IAOUT

The TMS3473B is supplied in a 20-pin surface-mount package (DW) and is characterized for operation from

–20

°C to 45°C.

This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These

circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C,

Method 3015; however, precautions should be taken to avoid application of any voltage higher than maximum-rated voltages to these

high-impedance circuits. During storage or handling, the device leads should be shorted together or the device should be placed in

conductive foam. In a circuit, unused inputs should always be connected to an appropriated logic voltage level, preferably either VCC or ground.

Specific guidelines for handling devices of this type are contained in the publication

Guidelines for Handling Electrostatic-Discharge-Sensitive

(ESDS) Devices and Assemblies available from Texas Instruments.

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IALVL

I/N

IAIN

ABIN

MIDSEL

SAIN

PD

GND

IASR

ABSR

ABLVL

IAOUT

ABOUT

SAOUT

DW PACKAGE

(TOP VIEW)

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

TI is a trademark of Texas Instruments Incorporated.