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ASM3P2531AG-08ST Datasheet(PDF) 4 Page - PulseCore Semiconductor |
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ASM3P2531AG-08ST Datasheet(HTML) 4 Page - PulseCore Semiconductor |
4 / 8 page February 2007 ASM3P2531A rev 1.4 Low Frequency EMI Reduction 4 of 8 Notice: The information in this document is subject to change without notice. DC Electrical Characteristics Symbol Parameter Min Typ Max Unit VIL Input low voltage VSS - 0.3 0.8 V VIH Input high voltage 2.0 VDD + 0.3 V IIL Input low current -35 µA IIH Input high current 35 µA VOL Output low voltage VDD = 3.3V, IOL = 6 mA 0.4 V VOH Output high voltage VDD = 3.3V, IOH = 15 mA 2.5 V IDD Static supply current standby mode 3.0 mA ICC Dynamic supply current 3.3V and 15pF loading 10 14 mA VDD Operating voltage 3.0 3.3 3.6 V tON Power-up time (first locked cycle after power up) 0.18 mS ZOUT Clock output impedance 50 Ω AC Electrical Characteristics Symbol Parameter Min Typ Max Unit fIN Input frequency 27 55 MHz fOUT Output frequency 27 55 MHz tLH 1 Output rise time Measured from 0.8 V to 2.0 V 0.4 0.6 1.2 nS tHL 1 Output fall time Measured from 2.0 V to 0.8 V 0.4 0.6 1.2 nS tJC Jitter (Cycle to cycle) 360 pS TD Output duty cycle 45 50 55 % Note 1: tLH and tHL are measured into a capacitive load of 15pF |
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