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TPIC1504 Datasheet(PDF) 3 Page - Texas Instruments |
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TPIC1504 Datasheet(HTML) 3 Page - Texas Instruments |
3 / 16 page TPIC1504 QUAD AND HEX POWER DMOS ARRAY SLIS057 – OCTOBER 1996 3 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 electrical characteristics, Q1A, Q1B, Q2A, Q2B, TC = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)DSX Drain-to-source breakdown voltage ID = 250 µA, VGS = 0 20 V VGS(th) Gate-to-source threshold voltage ID = 1 mA, See Figure 5 VDS = VGS, 1.5 1.9 2.2 V VGS(th)match Gate-to-source threshold voltage matching ID = 1 mA, VDS = VGS 40 mV V(BR) Reverse drain-to-GND breakdown voltage Drain-to-GND current = 250 µA (D1, D2) 20 V V(BR)GS Gate-to-source threshold breakdown voltage, Q2C IGS = 100 µA 6 V V(BR)SG Source-to-gate breakdown voltage, Q2C ISG = 100 µA 0.5 V V(DS)on Drain-to-source on-state voltage ID = 1.5 A, VGS = 10 V, See Notes 3 and 4 0.375 0.45 V VF Forward on-state voltage, GND-to-VDD1, GND-to-VDD2 ID = 1.5 A (D1, D2) See Notes 3 and 4 1.7 V VF(SD) Forward on-state voltage, source-to-drain IS = 1.5 A, VGS = 0, See Notes 3 and 4 and Figure 19 0.85 1.2 V IDSS Zero gate voltage drain current VDS = 16 V, TC = 25°C 0.05 1 µA IDSS Zero-gate-voltage drain current DS , VGS = 0 TC = 125°C 0.5 10 µA IGSSF Forward gate current, drain short-circuited to source VGS = 16 V, VDS = 0 10 100 nA IGSSR Reverse gate current, drain short-circuited to source VSG = 0.5 V, VDS = 0 10 100 nA Ilk Leakage current, VDD1-to-GND, VDD2-to-GND, VDGND =16V TC = 25°C 0.05 1 µA Ilkg g, DD1 , DD2 , gate shorted to source VDGND = 16 V TC = 125°C 0.5 10 µA rDS( ) Static drain to source on state resistance VGS = 10 V, ID = 1.5 A, TC = 25°C 0.25 0.3 Ω rDS(on) Static drain-to-source on-state resistance D , See Notes 3 and 4 and Figure 9 TC = 125°C 0.4 0.475 Ω gfs Forward transconductance VDS = 14 V, ID = 750 mA, See Notes 3 and 4 and Figure 13 0.8 1.2 S Ciss Short-circuit input capacitance, common source 99 Coss Short-circuit output capacitance, common source VDS = 14 V, VGS = 0, 81 pF Crss Short-circuit reverse transfer capacitance, common source f = 1 MHz, See Figure 17 59 F αs Sense-FET drain current ratio VDS = 6 V, ID(Q2C) = 40 µA 100 150 200 NOTES: 3. Technique should limit TJ – TC to 10°C maximum. 4. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. source-to-drain diode characteristics, Q1A, Q2A, TC = 25°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT trr Reverse-recovery time IS = 750 mA, VDS =14V VGS = 0, di/dt = 100 A/ µs 18 ns QRR Total diode charge VDS = 14 V, See Figures 1 and 23 di/dt = 100 A/ µs, 13 nC |
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