TPIC1533

QUAD AND HEX POWER DMOS ARRAY

SLIS064 – OCTOBER 1996

5

POST OFFICE BOX 655303

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)DSX

Drain-to-source breakdown voltage

ID = 250 µA,

VGS = 0

20

V

VGS(th)

Gate-to-source threshold voltage

ID = 1 mA,

See Figure 6

VDS = VGS,

1.4

1.7

2.1

V

GS(th)

g

ID = 5 mA,

VDS = VGS

1.65

1.95

2.35

V(BR)

Reverse drain-to-GND breakdown voltage

Drain-to-GND current = 250

µA (D3)

20

V

VDS(on)

Drain-to-source on-state voltage

ID = 2 A,

See Notes 3 and 4

VGS = 10 V,

0.44

0.6

V

VF

Forward on-state voltage, GND-to-VDD3

ID = 1.5 A (D3)

See Notes 3 and 4

1.7

V

VF(SD)

Forward on state voltage source to drain

IS = 1.5 A,

VGS = 0

See Notes 3 and 4 and Figure 20

1

1.2

V

VF(SD)

Forward on-state voltage, source-to-drain

IS = 2 A,

VGS = 0

See Notes 3 and 4 and Figure 20

1.1

1.3

V

VF

Forward on-state voltage, GND-to-GATE 3A,

GND-to-GATE4A, GND-to GATE5A

ID = 1 mA (D4, D5, D6)

0.5

V

IDSS

Zero gate voltage drain current

VDS = 16 V,

TC = 25°C

0.05

1

µA

IDSS

Zero-gate-voltage drain current

DS

,

VGS = 0

TC = 125°C

0.5

10

µA

IGSSF

Forward gate current, drain short-circuited to

source

VGS = 16 V,

VDS = 0

10

100

nA

Ilk

Leakage current, VDD3-to-GND, gate shorted to

VDGND =16V

TC = 25°C

0.05

1

µA

Ilkg

g,

DD3

,g

source

VDGND = 16 V

TC = 125°C

0.5

10

µA

VGS = 10 V,

ID = 1.5 A,

TC = 25°C

0.22

0.3

rDS( )

Static drain to source on state resistance

D

,

See Notes 3 and 4

and Figures 8 and 10

TC = 125°C

0.32

0.4

Ω

rDS(on)

Static drain-to-source on-state resistance

VGS = 10 V,

ID = 2 A,

TC = 25°C

0.22

0.3

Ω

D

,

See Notes 3 and 4

and Figure 10

TC = 125°C

0.32

0.4

gf

Forward transconductance

VDS = 14 V,

ID = 500 mA,

See Notes 3 and 4

0.3

0.8

S

gfs

Forward transconductance

VDS = 14 V,

ID = 750 mA,

See Notes 3 and 4 and Figure 14

0.4

0.9

S

Ciss

Short-circuit input capacitance, common source

120

Coss

Short-circuit output capacitance, common source

VDS = 14 V,

VGS = 0,

140

pF

Crss

Short-circuit reverse transfer capacitance,

common source

f = 1 MHz,

See Figure 18

80

F

NOTES:

3: Technique should limit TJ – TC to 10°C maximum.

4: These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.