TPS2834, TPS2835

SYNCHRONOUS-BUCK MOSFET DRIVERS

WITH DEADTIME CONTROL

SLVS223 – NOVEMBER 1999

5

POST OFFICE BOX 655303

electrical characteristics over recommended operating virtual junction temperature range,

output drivers

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Dt

l

2%

V(BOOT) – V(BOOTLO) = 4.5 V,

V(HIGHDR) = 4 V

0.7

1.1

High-side sink

(see Note 3)

Duty cycle < 2%,

tpw < 100 µs

(see Note 2)

V(BOOT) – V(BOOTLO) = 6.5 V,

V(HIGHDR) = 5 V

1.1

1.5

A

(see Note 2)

V(BOOT) – V(BOOTLO) = 12 V,

V(HIGHDR) = 10.5 V

2

2.4

Dt

l

2%

V(BOOT) – V(BOOTLO) = 4.5 V,

V(HIGHDR) = 0.5V

1.2

1.4

Peak output current

High-side source

(see Note 3)

Duty cycle < 2%,

tpw < 100 µs

(see Note 2)

V(BOOT) – V(BOOTLO) = 6.5 V,

V(HIGHDR) = 1.5 V

1.3

1.6

A

(see Note 2)

V(BOOT) – V(BOOTLO) = 12 V,

V(HIGHDR) = 1.5 V

2.3

2.7

Lid

i k

Duty cycle < 2%,

VCC = 4.5 V, V(LOWDR) = 4 V

1.3

1.8

Low-side sink

(see Note 3)

Duty cycle < 2%,

tpw < 100 µs

VCC = 6.5 V, V(LOWDR) = 5 V

2

2.5

A

(see Note 3)

(see Note 2)

VCC = 12 V, V(LOWDR) = 10.5 V

3

3.5

Lid

Duty cycle < 2%,

VCC = 4.5 V, VLOWDR)) = 0.5V

1.4

1.7

Low-side source

(see Note 3)

Duty cycle < 2%,

tpw < 100 µs

VCC = 6.5 V, V(LOWDR)) = 1.5 V

2

2.4

A

(see Note 3)

(see Note 2)

VCC = 12 V, V(LOWDR0) = 1.5 V

2.5

3

V(BOOT) – V(BOOTLO) = 4.5 V,

V(HIGHDR)= 0.5 V

5

High-side sink (see Note 3)

V(BOOT) – V(BOOTLO) = 6.5 V,

V(HIGHDR) = 0.5 V

5

Ω

V(BOOT) – V(BOOTLO) = 12 V,

V(HIGHDR) = 0.5 V

5

V(BOOT) – V(BOOTLO) = 4.5 V,

V(HIGHDR) = 4 V

75

Output resistance

High-side source (see Note 3)

V(BOOT) – V(BOOTLO) = 6.5 V,

V(HIGHDR)= 6 V

75

Ω

V(BOOT) – V(BOOTLO) = 12 V,

V(HIGHDR) =11.5 V

75

V(DRV) = 4.5 V, V(LOWDR)= 0.5 V

9

Low-side sink (see Note 3)

V(DRV) = 6.5 V, V(LOWDR) = 0.5 V

7.5

Ω

V(DRV) = 12 V, V(LOWDR) = 0.5 V

6

V(DRV) = 4.5 V, V(LOWDR) = 4 V

75

Low-side source (see Note 3)

V(DRV) = 6.5 V, V(LOWDR)= 6 V

75

Ω

V(DRV) = 12 V, V(LOWDR) = 11.5 V

75

NOTES:

2: Ensured by design, not production tested.

3. The pullup/pulldown circuits of the drivers are bipolar and MOSFET transistors in parallel. The peak output current rating is the

combined current from the bipolar and MOSFET transistors. The output resistance is the rDS(on) of the MOSFET transistor when

the voltage on the driver output is less than the saturation voltage of the bipolar transistor.