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bq24150AYFFR Datasheet(PDF) 4 Page - Texas Instruments |
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bq24150AYFFR Datasheet(HTML) 4 Page - Texas Instruments |
4 / 41 page RECOMMENDED OPERATING CONDITIONS ELECTRICAL CHARACTERISTICS bq24150A bq24151A SLUS931 – APRIL 2009 ..................................................................................................................................................................................................... www.ti.com MIN NOM MAX UNIT VBUS Supply voltage, VBUS 4 6(1) V TJ Operating junction temperature range 0 +125 °C (1) The inherent switching noise voltage spikes should not exceed the absolute maximum rating on either the BOOST or SW pins. A tight layout minimizes switching noise. Circuit of Figure 1, VBUS = 5 V, HZ_MODE = 0, OPA_MODE = 0 (charger mode operation), TJ = 0°C to 125°C, TJ = 25°C for typical values (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT INPUT CURRENTS VBUS > VBUS(min), PWM switching 10 mA VBUS > VBUS(min), PWM NOT switching 5 0°C < TJ < 85°C, VBUS = 5 V, HZ_MODE = 1, 20 µA I(VBUS) VBUS supply current control V(AUXPWR) > V(LOWV), SCL, SDA, OTG = 0 V or 1.8 V 0°C < TJ < 85°C, VBUS = 5 V, HZ_MODE = 1, V(AUXPWR) < V(LOWV), 32S mode, SCL, SDA, OTG = 0 35 µA V or 1.8 V 0°C < TJ < 85°C, V(AUXPWR) = 4.2 V, High Impedance Ilkg Leakage current from battery to VBUS pin 5 µA mode Battery discharge current in High Impedance 0°C < TJ < 85°C, V(AUXPWR) = 4.2 V, High Impedance 20 µA mode, (CSIN, CSOUT, AUXPWR, SW pins) mode, SCL, SDA, OTG = 0 V or 1.8 V VOLTAGE REGULATION V(OREG) Output charge voltage Operating in voltage regulation, programmable 3.5 4.44 V TA = 25°C –0.5% 0.5% Voltage regulation accuracy –1% 1% CURRENT REGULATION (FAST CHARGE) V(LOWV) ≤ V(AUXPWR) < V(OREG), 550 IO(CHARGE) Output charge current 1250 mA VBUS > V(SLP), R(SNS) = 68 mΩ, Programmable Regulation accuracy for charge current across 20 mV ≤ V(IREG) ≤ 40 mV –5% 5% R(SNS) 40 mV < V(IREG) –3% 3% V(IREG) = IO(CHARGE) × R(SNS) WEAK BATTERY DETECTION V(LOWV) Weak battery voltage threshold Programmable 3.4 3.7 V Weak battery voltage accuracy –5% 5% Hysteresis for V(LOWV) Battery voltage falling 100 mV Deglitch time for weak battery threshold Rising voltage, 2-mV over drive, tRISE = 100 ns 30 ms OTG PIN LOGIC LEVEL VIL Input low threshold level 0.4 V VIH Input high threshold level 1.3 V CHARGE TERMINATION DETECTION Termination charge current V(AUXPWR) > V(OREG) – V(RCH), mA I(TERM) 50 400 VBUS > V(SLP), R(SNS) = 68 mΩ, Programmable Deglitch time for charge termination Both rising and falling, 2-mV overdrive, 30 ms tRISE, tFALL = 100 ns 3 mV ≤ V(IREG_TERM) < 5 mV –25% 25% Voltage regulation accuracy for termination current across R(SNS) 5 mV ≤ V(IREG_TERM) < 20 mV –10% 10% V(IREG_TERM) = IO(TERM) × R(SNS) 20 mV ≤ V(IREG_TERM) ≤ 40 mV –5% 5% INPUT POWER SOURCE DETECTION Input voltage lower limit Input power source detection, Input voltage falling 3.6 3.8 4 V VIN(min) Deglitch time for VBUS rising above VIN(min) Rising voltage, 2-mV overdrive, tRISE = 100 ns 30 ms Hysteresis for VIN(min) Input voltage rising 100 200 mV tINT Detection Interval Input power source detection 2 S 4 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): bq24150A bq24151A |
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