ABSOLUTE MAXIMUM RATINGS

(1)

DISSIPATION RATINGS

THERMAL CHARACTERISTICS

KEY ATTRIBUTES

SN65ELT21

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

PARAMETER

CONDITIONS

VALUE

UNIT

Absolute PECL mode supply voltage

6

V

±0.5

mA

PECL input voltage

6

V

Operating temperature range

–40 to 85

°C

Storage temperature range

–65 to 150

°C

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any conditions beyond those indicated under recommended operating conditions

is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

POWER RATING

THERMAL RESISTANCE,

DERATING FACTOR

POWER RATING

CIRCUIT BOARD

JUNCTION-TO-AMBIENT

PACKAGE

MODEL

NO AIRFLOW

(mW)

(mW/°C)

(mW)

SOIC

Low-K

719

139

7

288

High-K

840

119

8

336

SOIC-TSSOP

Low-K

469

213

5

188

High-K

527

189

5

211

over operating free-air temperature range (unless otherwise noted)

PARAMETER

MIN

TYP

MAX

UNIT

θ

JB

Junction-to-board thermal resistance

SOIC

79

°C/W

SOIC-TSSOP

120

θ

JC

Junction-to-case thermal resistance

SOIC

98

°C/W

SOIC-TSSOP

74

CHARACTERISTICS

VALUE

Internal input pull-down resistor

50 k

Ω

Moisture sensitivity level

Level 1

Flame ability rating (oxygen index: 28 to 34)

UL 94 V-0 at 0.125 in

Electrostatic discharge

Human body model

2 kV

Charged-device model

1.5 kV

Meets or exceeds JEDEC Spec EIA/JESD78 latchup test

2

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