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TPS53126RGET Datasheet(PDF) 5 Page - Texas Instruments |
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TPS53126RGET Datasheet(HTML) 5 Page - Texas Instruments |
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5 / 30 page  TPS53126 www.ti.com........................................................................................................................................................................................................ SLUS909 – MAY 2009 ELECTRICAL CHARACTERISTICS (continued) over recommended free-air temperature range, VIN = 12 V (Unless otherwise noted) PARAMETER CONDITIONS MIN TYP MAX UNIT VFB VOLTAGE and DISCHARGE RESISTANCE Bandgap initial regulation VBG TA = 25°C -1.0% 1.0% accuracy TA = 25°C, TEST2 = 0 V, SWinj = OFF 755 765 775 VVFBTHLx VFBx threshold voltage mV TA = –40°C to 85°C, TEST2 = 0 V, SWinj = OFF (1) 752 778 TA = 25°C, TEST2 = V5FILT, SWinj = OFF 748 758 768 VVFBTHHx VFBx threshold voltage mV TA = –40°C to 85°C, TEST2 = V5FILT, SWinj = OFF (1) 745 771 IVFB VFB input current VFBx = 0.8 V, TA = 25°C –0.01 ±0.1 µA RDischg VO discharge resistance ENx = 0 V, VOx = 0.5 V, TA = 25°C 40 80 Ω VREG5 OUTPUT TA = 25°C, 5.5 V < VIN < 24 V, VVREG5 VREG5 output voltage 4.8 5.0 5.2 V 0 < IVREG5 < 10 mA VLN5 Line regulation 5.5 V < VIN < 24 V, IVREG5 = 10 mA 20 mV VLD5 Load regulation 1 mA < IVREG5 < 10 mA 40 mV IVREG5 Output current VIN = 5.5 V, VVREG5 = 4 V, TA = 25°C 170 mA OUTPUT: N-CHANNEL MOSFET GATE DRIVERS Source, IDRVHx = –100 mA 5.5 11 RDRVH DRVH resistance Ω Sink, IDRVHx = 100 mA 2.5 5 Source, IDRVLx = –100 mA 4 8 RDRVL DRVL resistance Ω Sink, IDRVLx = 100 mA 2 4 DRVHx-low to DRVLx-on 20 50 80 TD Dead time ns DRVLx-low to DRVHx-on 20 40 80 INTERNAL BOOST DIODE VFBST Forward voltage VVREG5-VBSTx, IF = 10 mA, TA = 25°C 0.7 0.8 0.9 V IVBSTLK VBST leakage current VBSTx = 29 V, SWx = 24 V, TA = 25°C 0.1 1 µA ON-TIME TIMER CONTROL TON1L CH1 on time SW1 = 12 V, VO1 = 1.8 V, TEST2 = 0 V 490 ns TON2L CH2 on time SW2 = 12 V, VO2 = 1.8 V, TEST2 = 0 V 390 ns TOFF1L CH1 min off time SW1 = 0.7 V, TA = 25°C, VFB1 = 0.7 V, TEST2 = 0 V 285 ns TOFF2L CH2 min off time SW2 = 0.7 V, TA = 25°C, VFB2 = 0.7 V, TEST2 = 0 V 285 ns TON1H CH1 on time SW1 = 12 V, VO1 = 1.8 V, TEST2 = V5FILT 165 ns TON2H CH2 on time SW2 = 12 V, VO2 = 1.8 V, TEST2 = V5FILT 140 ns SW1 = 0.7 V, TA = 25°C, VFB1 = 0.7 V, TEST2 = TOFF1H CH1 min off time 216 ns V5FILT SW2 = 0.7 V, TA = 25°C, VFB2 = 0.7 V, TEST2 = TOFF2H CH2 min off time 216 ns V5FILT SOFT START Tss Internal SS time Internal soft start VFBx = 0.735 V 0.85 1.2 1.4 ms UVLO Wake up 3.7 4.0 4.3 VUV5VFILT V5FILT UVLO threshold V Hysteresis 0.2 0.3 0.4 LOGIC THRESHOLD VENH ENx H-level input voltage EN 2.0 V VENL ENx L-level input voltage EN 0.3 V CURRENT SENSE ITRIP TRIP source current VTRIPx = 0.1 V, TA = 25°C 8.5 10 11.5 µA (1) Ensured by design. Not production tested. Copyright © 2009, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Link(s): TPS53126 |
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