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SBE817 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # SBE817
Description  Low IR Schottky Barrier Diode 15V, 2.0A Rectifier
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

SBE817 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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SBE817
No. A0328-2/4
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Reverse Voltage
VR
IR=0.3mA
15
V
Forward Voltage
VF1IF=1.0A
0.45
0.5
V
VF2IF=2.0A
0.52
0.57
V
Reverse Current
IR
VR=7.5V
6
μA
Interterminal Capacitance
C
VR=10V, f=1MHz
35
pF
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
10
ns
Thermal Resistance
Rth(j-a)
When mounted on ceramic substrate (900mm2
✕0.8mm)
65
°C / W
Package Dimensions
Electrical Connection
unit : mm (typ)
7045-004
trr Test Circuit
1 : Anode1
2 : NC
3 : Anode2
4 : Anode2(NC)
5 : Cathode2
6 : Cathode2
7 : Cathode1
8 : Cathode1
SANYO : EMH8
1
4
85
0.125
0.5
2.0
0.2
23
4
1
76
5
8
1 : Anode1
2 : NC
3 : Anode2
4 : Anode2(NC)
5 : Cathode2
6 : Cathode2
7 : Cathode1
8 : Cathode1
Top view
Duty≤10%
50Ω
100Ω
10Ω
--5V
trr
10μs
*: Terminal 4 is used for the purposes such as
test. Although it is connected to Anode 2,
please handle it as NC Terminal
Forward Voltage, VF -- V
IF -- VF
Reverse Voltage, VR -- V
IR -- VR
IT14237
IT14238
Ta=125
°C
100
°C
75
°C
50
°C
25
°C
0
°C
--25
°C
0
1
2
3
4
5
6
7
8
9
10
11
12 13 14 15
0.0001
0.01
0.001
0.1
1.0
10
100
1000
10000
0
0.001
2
3
5
7
2
3
5
0.01
7
2
3
5
0.1
0.7
0.5
0.6
0.1
0.2
0.3
0.4
7
2
3
1.0


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