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CY62126EV30 Datasheet(PDF) 4 Page - Cypress Semiconductor

Part # CY62126EV30
Description  1-Mbit (64K x 16) Static RAM
Download  13 Pages
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY62126EV30 Datasheet(HTML) 4 Page - Cypress Semiconductor

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MoBL®, CY62126EV30
Document #: 38-05486 Rev. *E
Page 4 of 13
Thermal Resistance
Tested initially and after any design or process changes that may affect these parameters.
Parameter
Description
Test Conditions
VFBGA
Package
TSOP II
Package
Unit
ΘJA
Thermal Resistance
(Junction to Ambient)
Still Air, soldered on a 4.25 x 1.125 inch,
two-layer printed circuit board
58.85
28.2
°C/W
ΘJC
Thermal Resistance
(Junction to Case)
17.01
3.4
°C/W
Figure 3. AC Test Loads and Waveforms
Parameters
2.2V - 2.7V
2.7V - 3.6V
Unit
R1
16600
1103
Ohms
R2
15400
1554
Ohms
RTH
8000
645
Ohms
VTH
1.2
1.75
Volts
Data Retention Characteristics
Over the Operating Range
Parameter
Description
Conditions
Min
Typ[1]
Max
Unit
VDR
VCC for Data Retention
1.5
V
ICCDR[7]
Data Retention Current
VCC= VDR, CE > VCC – 0.2V,
VIN > VCC – 0.2V or VIN < 0.2V
Industrial
3
μA
Automotive
30
μA
tCDR[8]
Chip Deselect to Data
Retention Time
0ns
tR[9]
Operation Recovery Time
tRC
ns
Figure 4. Data Retention Waveform
VCC
VCC
OUTPUT
R2
30 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
Rise Time = 1 V/ns
Fall Time = 1 V/ns
OUTPUT
VTH
Equivalent to: THÉVENIN EQUIVALENT
ALL INPUT PULSES
RTH
R1
VCC(min)
VCC(min)
tCDR
VDR > 1.5V
DATA RETENTION MODE
tR
VCC
CE
Notes
8. Tested initially and after any design or process changes that may affect these parameters.
9. Full device AC operation requires linear VCC ramp from VDR to VCC(min) > 100 μs.
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