MoBL®, CY62126EV30
Document #: 38-05486 Rev. *E
Page 3 of 13
Maximum Ratings
Exceeding maximum ratings may shorten the battery life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied ............................................ –55°C to +125°C
Supply Voltage to Ground
Potential................................. –0.3V to 3.6V (VCCmax + 0.3V)
DC Voltage Applied to Outputs
in High-Z State[4, 5] ................ –0.3V to 3.6V (VCCmax + 0.3V)
DC Input Voltage[4, 5]
...............−0.3V to 3.6V (VCCmax + 0.3V)
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage.......................................... > 2001V
(MIL-STD-883, Method 3015)
Latch up Current.................................................... > 200 mA
Operating Range
Device
Range
Ambient
Temperature
VCC[6]
CY62126EV30LL
Industrial
–40°C to +85°C
2.2V to
3.6V
Automotive –40°C to +125°C
Electrical Characteristics (Over the Operating Range)
Parameter
Description
Test Conditions
45 ns (Industrial)
55 ns (Automotive)
Unit
Min Typ[1]
Max
Min Typ[1]
Max
VOH
Output HIGH Voltage IOH = –0.1 mA
2.0
2.0
V
IOH = –1.0 mA, VCC > 2.70V
2.4
2.4
V
VOL
Output LOW Voltage
IOL = 0.1 mA
0.4
0.4
V
IOL = 2.1mA, VCC > 2.70V
0.4
0.4
V
VIH
Input HIGH Voltage
VCC = 2.2V to 2.7V
1.8
VCC + 0.3 1.8
VCC + 0.3
V
VCC = 2.7V to 3.6V
2.2
VCC + 0.3 2.2
VCC + 0.3
V
VIL
Input LOW
Voltage
VCC = 2.2V to 2.7V
–0.3
0.6
–0.3
0.6
V
VCC = 2.7V to 3.6V
–0.3
0.8
–0.3
0.8
V
IIX
Input Leakage Current GND < VI < VCC
–1
+1
–4
+4
μA
IOZ
Output Leakage
Current
GND < VO < VCC, Output
Disabled
–1
+1
–4
+4
μA
ICC
VCC Operating Supply
Current
f = fmax = 1/tRC VCC = VCCmax
IOUT = 0 mA
CMOS levels
11
16
11
35
mA
f = 1 MHz
1.3
2.0
1.3
4.0
ISB1
Automatic CE Power
down Current
—CMOS Inputs
CE > VCC − 0.2V,
VIN > VCC – 0.2V, VIN < 0.2V)
f = fmax (Address and Data Only),
f = 0 (OE, BHE, BLE and WE),
VCC = 3.60V
14
1
35
μA
ISB2 [7]
Automatic CE Power
down Current
—CMOS Inputs
CE > VCC – 0.2V,
VIN > VCC – 0.2V or VIN < 0.2V,
f = 0, VCC = 3.60V
14
1
30
μA
Capacitance
For all packages. Tested initially and after any design or process changes that may affect these parameters.
Parameter
Description
Test Conditions
Max
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz, VCC = VCC(typ)
10
pF
COUT
Output Capacitance
10
pF
Notes
4. VIL(min) = –2.0V for pulse durations less than 20 ns.
5. VIH(max) = VCC+0.75V for pulse durations less than 20 ns.
6. Full device AC operation assumes a 100
μs ramp time from 0 to Vcc(min) and 200 μs wait time after Vcc stabilization.
7. Only chip enable (CE) and byte enables (BHE and BLE) need to be tied to CMOS levels to meet the ISB2 / ICCDR spec. Other inputs can be left floating.
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