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2SD1441 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SD1441 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page Product Specification www.jmnic.com JMnic Silicon NPN Power Transistors 2SD1441 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VEBO Emitter-base breakdown voltage IE=500mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=3A; IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=1A 1.5 V VCB=750V; IE=0 50 μA ICBO Collector cut-off current VCB=1500V; IE=0 1 mA hFE DC current gain IC=3A ; VCE=10V 5 15 ts Storage time 4 9 μs tf Fall time IC=3A IBend=1A,LLeak=5μH 0.8 μs VF Diode forward voltage IF=-4A,IB=0 2.2 V |
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