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HIT647 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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HIT647 Datasheet(HTML) 1 Page - Renesas Technology Corp |
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1 / 5 page  REJ03G1504-0300 Rev.3.00 Jun 23, 2009 Page 1 of 4 HIT647 Silicon PNP Epitaxial REJ03G1504-0300 Rev.3.00 Jun 23, 2009 Features • Low frequency power amplifier • Complementary pair with HIT667 Outline 1. Emitter 2. Collector 3. Base RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage VCEO –100 V Emitter to base voltage VEBO –6 V Collector current IC –1.0 A Collector peak current IC (peak) * 1 –2.0 A Collector power dissipation PC 0.9 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note : 1. PW ≤ 10 ms, Duty cycle ≤ 20% |
Similar Part No. - HIT647_09 |
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Similar Description - HIT647_09 |
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