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APT48M80L Datasheet(PDF) 2 Page - Microsemi Corporation |
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APT48M80L Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 4 page Static Characteristics TJ = 25°C unless otherwise specified Source-Drain Diode Characteristics Dynamic Characteristics TJ = 25°C unless otherwise specified 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at T J = 25°C, L = 6.9mH, RG = 25Ω, IAS = 24A. 3 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 4 C o(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 C o(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of V DS less than V(BR)DSS, use this equation: Co(er) = -8.32E-8/VDS^2 + 3.49E-8/VDS + 1.30E-10. 6 R G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. G D S APT48M80B2_L Symbol Parameter Test Conditions Min Typ Max Unit V BR(DSS) Drain-Source Breakdown Voltage V GS = 0V, ID = 250μA 800 V ∆V BR(DSS)/∆TJ Breakdown Voltage Temperature Coefficient Reference to 25°C, I D = 250μA 0.87 V/°C R DS(on) Drain-Source On Resistance 3 V GS = 10V, ID = 24A 0.17 0.19 Ω V GS(th) Gate-Source Threshold Voltage V GS = VDS, ID = 2.5mA 345 V ∆V GS(th)/∆TJ Threshold Voltage Temperature Coefficient -10 mV/°C I DSS Zero Gate Voltage Drain Current V DS = 800V V GS = 0V T J = 25°C 100 μA T J = 125°C 500 I GSS Gate-Source Leakage Current V GS = ±30V ±100 nA Symbol Parameter Test Conditions Min Typ Max Unit g fs Forward Transconductance V DS = 50V, ID = 24A 43 S C iss Input Capacitance V GS = 0V, VDS = 25V f = 1MHz 9330 pF C rss Reverse Transfer Capacitance 160 C oss Output Capacitance 930 C o(cr) 4 Effective Output Capacitance, Charge Related V GS = 0V, VDS = 0V to 533V 440 C o(er) 5 Effective Output Capacitance, Energy Related 220 Q g Total Gate Charge V GS = 0 to 10V, ID = 24A, V DS = 400V 305 nC Q gs Gate-Source Charge 51 Q gd Gate-Drain Charge 155 t d(on) Turn-On Delay Time Resistive Switching V DD = 400V, ID = 24A R G = 2.2Ω 6 , V GG = 15V 55 ns t r Current Rise Time 75 t d(off) Turn-Off Delay Time 230 t f Current Fall Time 70 Symbol Parameter Test Conditions Min Typ Max Unit I S Continuous Source Current (Body Diode) 49 A I SM Pulsed Source Current (Body Diode) 1 173 V SD Diode Forward Voltage I SD = 24A, TJ = 25°C, VGS = 0V 0.8 1.0 V t rr Reverse Recovery Time I SD = 24A 3 di SD/dt = 100A/μs, TJ = 25°C 970 nS Q rr Reverse Recovery Charge 22 μC dv/dt Peak Recovery dv/dt I SD ≤ 24A, di/dt ≤1000A/μs, V DD = 533V, T J = 125°C 10 V/ns MOSFET symbol showing the integral reverse p-n junction diode (body diode) |
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